2QD0535T33-C-xx

2QD0535T33-C-xx is a high power, dual-channel compact gate driver core designed for high reliability applications based on the ASIC chipset developed by Bronze Technologies.
2QD0535T33-C-xx can be used for IGBT modules with a blocking voltage up to 3300V. It can be applied to various topologies by adding proper peripheral circuitry.

Bronze_2QD0535T33-C-xx_EN_V1.3

Typical Applications Features Key parameters

Typical Applications

Engergy storage converters	Wind power converters	PV inverters
General purpose MV inverters

Features

Dual-channel IGBT gate driver core	Blocking voltage up to 3300V	Peak current ±35A, 5W output power per channel
Up to 10000V isolation voltage	Direct/half-bridge mode available	Primary/secondary side undervoltage lockout
IGBT short-circuit protection integrated	Advanced active clamping integrated	Soft shut down integrated

Mechanical Structure

Get a quick overview of overall system functionality.

View full size

Block Diagram

Get a quick overview of overall system functionality.

View full size

Key parameters

Maximum Voltage of Power Device	3300V	Maximum Switching Frequency	100kHz
Turn-ON Voltage	15V	Turn-OFF Voltage	-10V
Driving Power	5W	Gate Driving Current	±35A
Power Supply Voltage	15V	Maximum Supply Current	833mA
Operating Temperature	-40~+85℃	Primary and Secondary Side Insulation Voltage	10000Vac